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KBU4M Single Phase Diode Bridge Rectifier 4A 1000V With Silicone Case

Ningbo Anyo Import & Export Co., Ltd.

KBU4M Single Phase Diode Bridge Rectifier 4A 1000V With Silicone Case

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Brand Name : ANYO

Model Number : KBU4M

Place of Origin : China

MOQ : 500ps

Price : Negotiation

Supply Ability : 50000pcs per day

Packaging Details : 3000pcs/carton, 14.4kg, 46*24.5*26cm

Delivery Time : 8-10 work days

Payment Terms : L/C, T/T

Other name : silicon bridge rectifier

Reverse voltage : 1000V

Forward current : 4.0A

Number of elements : 4.0

Typical IR : less than 0.1μA

Tjmax. : 150℃

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Single phase bridge rectifier KBU4M 4A 1000V in a silicon case

Features:

Surage overload rating-125 amperes peak

Ideal for printed circuit board

Plastic material has Underwriters Laboratory Flammability Classification 94V-0

• Compliant to RoHS

Mounting position :Any

Description:

A bridge rectifier is an array of semiconductor diodes configured as a bridge that acts to change AC (alternating current) to full-wave pulsating DC (direct current). It is used in many electronic devices including laptop computers, cellular phones and PDA's. Depending on how you're viewing the electronic component, the four diodes form a square or diamond pattern. In a single-phase bridge rectifier, there are four diodes; in a 3 phase bridge rectifier, there are six diodes.

When AC current is connected across one diagonal, DC current is available across the other diagonal. The four diodes allow full-wave rectification without the need for a center-tap on the transformer.

Single-phase bridge rectifier is the most frequently-used circuit for electronic dc power supplies. It requires four diodes but the transformer used is not center-tapped and has a maximum voltage of VSM. The full-wave bridge-rectifier is available in three distinct physics forms. The main advantage of this bridge circuit is that it does not require a special centre tapped transformer, thereby reducing its size and cost. The single secondary winding is connected to one side of the diode bridge network and the load to the other side.

Maximum ratings and electrical characteristics:

Rating at 25℃ ambient temperature unless otherwise specified. Resistive or inductive load,60HZ.
For capacitive load, derate current by 20%

Characteristics Symbol KBU2M Unit
Maximum recurrent peak reverse voltage VRRM 1000 V
Maximum RMS bridge input voltage VRMS 700 V
Maximum DC blocking voltage VDC 1000 V
Maximum average forward rectified output current. @Ta=50°C I(AV) 4.0 A
Peak forward surage current 8.3ms single half sine-wave super impossed on rated load(JEDEC method) IFSM 125 A
Maximum forward voltage drop per bridge element at 2.0A/3.0A Peak VF 1.1 V
Maximum reverse current at rated DC blocking voltage per element @Ta=25°C IR 10.0 uA
Maximum reverse current at rated DC blocking voltage per element @Ta=150°C IR 1.0 mA
Operating temperature rangeTJ TJ -55~150
Storage temperature range TA TSTG -55~150

Dimension:(mm)

KBU4M Single Phase Diode Bridge Rectifier 4A 1000V With Silicone Case


Product Tags:

silicon bridge rectifier

      

single phase bridge rectifier

      
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